Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications. However. advanced FinFET nodes are facing significant challenges to enhance the device performance due to the increasingly prominent parasitic resistance and capacitance. In this study. https://allfixelectricales.shop/product-category/microwave-waveguide-cover-material/