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Progress in computational understanding of ferroelectric mechanisms in HfO2

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Abstract Since the first report of ferroelectricity in nanoscale HfO2-based thin films in 2011. this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry. and continues to do so. Despite its deceivingly simple chemical composition. https://www.learningepistemology.com/product-category/acne-treatments/
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